Technology - Schiltron_New_Test

Go to content

Main menu

Technology

Our 3-D solution for high density post-2-D NAND has the following attributes:

- Highest density of any 2-D or 3-D NAND approach
- Smaller cell than other 3-D NAND approaches
- String currents decoupled from density increases
- Orders of magnitude larger endurance than existing 2-D/3-D NAND
- Orders of magnitude lower read latency than existing 2-D/3-D NAND
- Path to 3-D Dynamic Memory



Our solution for 3-D Flash memory embedded in CMOS processes has the following attributes:

- Laterally scalable
- Easily stackable
- Orders of magnitude larger endurance than existing 2-D/3-D NAND
- Orders of magnitude lower read latency than existing 2-D/3-D NAND

- Path to low power dissipation 3-D Dynamic Memory
- Existing CMOS tools
- CMOS-friendly materials






Back to content | Back to main menu